Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers
نویسندگان
چکیده
Thick oxides deposited on 4H-SiC epilayers to form Metal-Oxide-Semiconductor capacitors have been studied by Capacitance-Voltage (C-V) and Thermally Stimulated Ionic Current (TSIC) measurements. The very negative flatband voltage VFB in regards the theoretical value indicates presence oxide of a large number positive charges. Positive mobile charges are responsible for part this unusual VFB, as shown hysteresis cycle C-V characteristics. Four traps detected at gate/oxide interface three oxide/SiC interface. One them is similar trap already MOS 3C-SiC 6H-SiC structures. others seem rather different. Dependences detrapping energy ions these determined. Secondary Ion Mass Spectroscopy analyses K+ Na+ concentrations that agree well with values obtained TSIC
منابع مشابه
Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy
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ژورنال
عنوان ژورنال: Materials Science And Engineering: B
سال: 2021
ISSN: ['0921-5107', '1873-4944']
DOI: https://doi.org/10.1016/j.mseb.2020.114840